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Results 591-600 of 691 (Search time: 0.005 seconds).
    • “A facial synthesis of ruthenium/reduced graphene oxide nanocomposite for effective electrochemical applications”, Solar Energy 191(2019) 420-426.
    Authors: Van-Duong Dao;  Advisor: -;  Co-Author: Nguyen Duc Hoa; Ngoc Hung Vu; Dang Viet Quang; Nguyen Van Hieu; Tran Thi Ngoc Dung; Nguyen Xuan Viet; Chu Manh Hung; Ho-Suk Choi (2019)

    The synthesis of advanced functional nanomaterials for electrochemical applications, such as water splitting, dye-sensitized solar cells (DSCs), and supercapacitor has been the topic of interest in recent years. This work presents the synthesis of ruthenium (Ru)/reduced graphene oxide (RGO) nanocomposite by using a facile and scalable liquid plasma-assisted method and its application as an electrode material in electrochemical applications for supercapacitor and triiodide reduction at counter electrodes (CEs) of DSCs. As the results, Ru nanoparticles have a size in the range of 4–10 nm that were homogenously distributed on the surface of the RGO layer. Electrochemical measurements demonstrated that the synthesized material is suitable for supercapacitor applications, whereas the cap...
    • Near-band-edge emission of mechanically milled and thermally annealed ZnO:Ge particles
    Authors: HN Van;  Advisor: -;  Co-Author: CX Thang; TTH Tam; VTN Minh; VH Pham (-)

    This paper reports a novel way for the synthesis of Ge-doped ZnO particles by a mechanically milled Ge and ZnO powder mixture (ZnO:Ge) followed by thermal annealing in Ar + 5%H2 to achieve near-band-edge (NBE) emission of ZnO with controllable intensities. The Ge-doped ZnO particles were synthesized by mechanical milling of a ZnO and Ge powder mixture up to 50 h in particularly, using different ZnO:Ge ratios and annealing temperatures. The Ge-doped ZnO particles were observed to have a rounded morphology with a diameter of ~500 nm when an annealing temperature of 1000°C was used. The Ge-doped ZnO particles showed NBE emission of ~380 nm with a suppressed visible band of ~500 nm as a function of the Ge content and annealing temperatures. These results suggest that the current method ...