Search

Current filters:


Current filters:


Author

Subject

Date issued

Has File(s)

Search Results

Results 1-2 of 2 (Search time: 0.001 seconds).
  • <<
  • 1
  • >>
    • Photoluminescence Study of As Doped p-type HgCdTe Absorber for Infrared Detectors Operating in the Range up to 8 µm
    Authors: Murawski, K.; Majkowycz, K.; Kopytko, M.;  Advisor: -;  Co-Author: - (2023)

    A HgCdTe photodiode grown by chemical vapor deposition (MOCVD) on a GaAs substrate operating in the long-wave infrared (LWIR) range was characterized using photoluminescence (PL) measurements. At high temperatures, the PL spectrum originates from a free-carrier emission and might be fitted by a theoretical expression being the product of the density of states and the Fermi–Dirac distribution. At low temperatures, the PL spectrum consists of multiple emission peaks that do not originate solely from the energy gap. Such spectra are not unambiguous to interpret due to the prominence of different optical transitions. Spectral response (SR) measurements were used to determine the energy gap (Eg) and extract the band-to-band transition from the PL spectra. PL peaks visible within the band...
    • DLTS Study of Defects in HgCdTe Heterostructure Photodiode
    Authors: Majkowycz, K.; Murawski, K.; Manyk, T.;  Advisor: -;  Co-Author: - (2023)

    Deep-level transient spectroscopy (DLTS) measurements were performed on HgCdTe heterostructure photodiode grown by metal-organic chemical vapor deposition (MOCVD) on GaAs substrate. In order to extract defects from individual layers of the heterostructure, three consecutive etchings were performed. In the first experiment, the N+/T/p/T/P+/n+ structure was chemically etched to the N+ bottom contact to obtain a mesa-type detector. Six localized defects were extracted across the entire photodiode. In the second experiment, the bottom contact was made to the p-type absorber. Two localized defects were found in the p/T/P+/n+ structure.