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    • Analysis of Temperature-Dependent Photoluminescence Spectra in Mid-Wavelength Infrared InAs/InAsSb Type-II Superlattice
    Authors: Murawski, K.; Manyk, T.; Kopytko, M.;  Advisor: -;  Co-Author: - (2023)

    Photoluminescence (PL) is one of the commonly used methods to determine the energy gap (Eg ) of semiconductors. In order to use it correctly, however, the shape of the PL peak must be properly analyzed; otherwise, the value of Eg is burdened with a large error. Eg is often mistakenly attributed to the PL peak position, which in type-II superlattices (T2SLs) exhibits typical “S-shaped” behavior as a function of temperature, significantly different from the Varshni model used to define the energy gap of III-V compounds. The position peak of the PL relative to the real Eg in T2SLs is red-shifted because of the carrier localization at low temperatures and blue-shifted because of the free carrier emission at high temperatures. To correctly determine Eg , the shape of the PL peak ...