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    • Photoluminescence Study of As Doped p-type HgCdTe Absorber for Infrared Detectors Operating in the Range up to 8 µm
    Authors: Murawski, K.; Majkowycz, K.; Kopytko, M.;  Advisor: -;  Co-Author: - (2023)

    A HgCdTe photodiode grown by chemical vapor deposition (MOCVD) on a GaAs substrate operating in the long-wave infrared (LWIR) range was characterized using photoluminescence (PL) measurements. At high temperatures, the PL spectrum originates from a free-carrier emission and might be fitted by a theoretical expression being the product of the density of states and the Fermi–Dirac distribution. At low temperatures, the PL spectrum consists of multiple emission peaks that do not originate solely from the energy gap. Such spectra are not unambiguous to interpret due to the prominence of different optical transitions. Spectral response (SR) measurements were used to determine the energy gap (Eg) and extract the band-to-band transition from the PL spectra. PL peaks visible within the band...
    • Demonstration of T2SLs InAs/InAsSb Based Interband Cascade Detector Supported by Immersion Lens for LWIR
    Authors: Gawron, Waldemar; Kubiszyn, Łukasz; Michalczewski, Krystian;  Advisor: -;  Co-Author: - (2023)

    This paper presents the performance of an interband cascade long-wavelength infrared detector designed for high operating temperatures supported by immersion lenses. The device is based on the “Ga-free” InAs/InAsSb type-II superlattice with highly doped p+/n+ superlattice tunneling junctions connecting adjacent stages. Detectivity of the multi-junction heterostructure detector exceeding 1010 cm Hz1/2/W was estimated at wavelength λ ~ 9 µm and T = 210 K and ~ 3 × 108 cm Hz1/2/W for T = 300 K, achieving a tenfold improvement in detectivity in comparison to a device without an immersion lens and 30-fold improvement in detectivity in comparison to the single-stage device.