Browsing by Author Abderrahime Sekkat

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  • Authors: Dorina T Papanastasiou1; Nicolas Charvin; Joao Resende; Viet Huong Nguyen; Abderrahime Sekkat; David Muñoz-Rojas; Carmen Jiménez; Lionel Flandin; Daniel Bellet;  Advisor: -;  Co-Author: - (2021)

    Silver nanowire (AgNW) networks are among the most promising indium-free, flexible transparent electrodes for energy, lighting and heating devices. However, the lack of stability of such networks is a key factor that limits their industrial application. While applications require homogeneous networks, non-homogeneous AgNW networks are intentionally prepared in the present work to probe the mechanisms leading to failure under electrical stress. We show that induced non-homogeneities have a strong impact both on the spatial distribution of temperature (measured by IR imaging) and the current density throughout the electrode (as deduced from modeling). Regions with higher current density...
  • Authors: Punam Murkute; Carmen Jiménez; Abderrahime Sekkat; Chiara Crivello; Viet Huong Nguyen; David Muñoz Rojas;  Advisor: -;  Co-Author: - (2021)

    Al-doped ZnO (AZO) has received significant attention due to its inherent properties like wide bandgap, high optical transparency, and electrical conductivity that has established its potential application in optoelectronic devices. The primary challenge in the efficient use of AZO thin films is the un-intentional formation of intrinsic defects, which deteriorate the device performance. The research community has made a significant effort to minimize these intrinsic defects and obtained high-quality films using low-cost growth techniques followed by a post-growth annealing treatment that has successfully suppressed defect states' formation. This presentation provides a comprehensive p...
  • Authors: Abderrahime Sekkat; Viet Huong Nguyen; César Arturo Masse de La Huerta; Laetitia Rapenne; Daniel Bellet; Anne Kaminski-Cachopo; Guy Chichignoud; David Muñoz-Rojas;  Advisor: -;  Co-Author: - (2021)

    Cu2O is a promising p-type semiconductor for low-cost photovoltaics and transparent optoelectronics. However, low-cost and low-temperature fabrication of Cu2O films with good transport properties remains challenging, thus limiting their widespread adoption in devices. Here, we report Cu2O thin films of 20–80 nm thickness with hole mobility up to 92 cm2V−1s−1 using atmospheric-pressure spatial atomic layer deposition at temperatures below 260 °C, from a copper (I) hexafluoro-2,4-pentanedionate cyclooctadiene precursor. Raman spectroscopy indicates the presence of copper split vacancies and shows that the high hole mobility can be correlated to a low concentration of shallow acceptor de...