Browsing by Author David Muñoz-Rojas

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  • Authors: Dorina T Papanastasiou1; Nicolas Charvin; Joao Resende; Viet Huong Nguyen; Abderrahime Sekkat; David Muñoz-Rojas; Carmen Jiménez; Lionel Flandin; Daniel Bellet;  Advisor: -;  Co-Author: - (2021)

    Silver nanowire (AgNW) networks are among the most promising indium-free, flexible transparent electrodes for energy, lighting and heating devices. However, the lack of stability of such networks is a key factor that limits their industrial application. While applications require homogeneous networks, non-homogeneous AgNW networks are intentionally prepared in the present work to probe the mechanisms leading to failure under electrical stress. We show that induced non-homogeneities have a strong impact both on the spatial distribution of temperature (measured by IR imaging) and the current density throughout the electrode (as deduced from modeling). Regions with higher current density...
  • Authors: Abdullah H. Alshehri; Jhi Yong Loke; Viet Huong Nguyen; Alexander Jones; Hatameh Asgarimoghaddam; Louis-Vincent Delumeau; Ahmed Shahin; Khaled H. Ibrahim; Kissan Mistry; Mustafa Yavuz; David Muñoz-Rojas; Kevin P. Musselman;  Advisor: -;  Co-Author: - (2021)

    Nanoscale films are integral to all modern electronics. To optimize device performance, researchers vary the film thickness by making batches of devices, which is time-consuming and produces experimental artifacts. Thin films with nanoscale thickness gradients that are rapidly deposited in open air for combinatorial and high-throughput (CHT) studies are presented. Atmospheric pressure spatial atomic layer deposition reactor heads are used to produce spatially varying chemical vapor deposition rates on the order of angstroms per second. ZnO and Al2O3 films are printed with nm-scale thickness gradients in as little as 45 s and CHT analysis of a metal-insulator-metal diode and perovskite...
  • Authors: Abderrahime Sekkat; Viet Huong Nguyen; César Arturo Masse de La Huerta; Laetitia Rapenne; Daniel Bellet; Anne Kaminski-Cachopo; Guy Chichignoud; David Muñoz-Rojas;  Advisor: -;  Co-Author: - (2021)

    Cu2O is a promising p-type semiconductor for low-cost photovoltaics and transparent optoelectronics. However, low-cost and low-temperature fabrication of Cu2O films with good transport properties remains challenging, thus limiting their widespread adoption in devices. Here, we report Cu2O thin films of 20–80 nm thickness with hole mobility up to 92 cm2V−1s−1 using atmospheric-pressure spatial atomic layer deposition at temperatures below 260 °C, from a copper (I) hexafluoro-2,4-pentanedionate cyclooctadiene precursor. Raman spectroscopy indicates the presence of copper split vacancies and shows that the high hole mobility can be correlated to a low concentration of shallow acceptor de...