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    • Investigation of the optical, electrical, and elemental properties upon annealing of spatial atomic layer deposited (SALD) Al-doped ZnO thin films
    Authors: Punam Murkute; Carmen Jiménez; Abderrahime Sekkat; Chiara Crivello; Viet Huong Nguyen; David Muñoz Rojas;  Advisor: -;  Co-Author: - (2021)

    Al-doped ZnO (AZO) has received significant attention due to its inherent properties like wide bandgap, high optical transparency, and electrical conductivity that has established its potential application in optoelectronic devices. The primary challenge in the efficient use of AZO thin films is the un-intentional formation of intrinsic defects, which deteriorate the device performance. The research community has made a significant effort to minimize these intrinsic defects and obtained high-quality films using low-cost growth techniques followed by a post-growth annealing treatment that has successfully suppressed defect states' formation. This presentation provides a comprehensive p...