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dc.contributor.authorVu Le Huy-
dc.contributor.authorShoji Kamiya-
dc.date.accessioned2021-09-10T04:46:50Z-
dc.date.available2021-09-10T04:46:50Z-
dc.date.issued2021-
dc.identifier.urihttps://link.springer.com/chapter/10.1007/978-3-030-69610-8_110-
dc.identifier.urihttps://dlib.phenikaa-uni.edu.vn/handle/PNK/2734-
dc.description.abstractRecently, dislocation in single-crystal silicon has been confirmed to be induced by fatigue. It was found that the fatigue lifetime of silicon is likely to be dominated by accumulation of crystal defects, i.e., dislocations. In previous studies, crystal dvi
dc.language.isoengvi
dc.publisherLecture Notes in Mechanical Engineeringvi
dc.subjectCompressive stress-
dc.subjectSilicon
dc.subjectMEMSvi
dc.titleOne More Evidence Supporting Damage Growth Inside Silicon MEMS Structures from Comparison of Strength Affected by Cyclic Compressive Stressvi
dc.typeBài tríchvi
eperson.identifier.doi10.1007/978-3-030-69610-8_110-
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