One More Evidence Supporting Damage Growth Inside Silicon MEMS Structures from Comparison of Strength Affected by Cyclic Compressive Stress

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DC Field	Value	Language
dc.contributor.author	Vu Le Huy	-
dc.contributor.author	Shoji Kamiya	-
dc.date.accessioned	2021-09-10T04:46:50Z	-
dc.date.available	2021-09-10T04:46:50Z	-
dc.date.issued	2021	-
dc.identifier.uri	https://link.springer.com/chapter/10.1007/978-3-030-69610-8_110	-
dc.identifier.uri	https://dlib.phenikaa-uni.edu.vn/handle/PNK/2734	-
dc.description.abstract	Recently, dislocation in single-crystal silicon has been confirmed to be induced by fatigue. It was found that the fatigue lifetime of silicon is likely to be dominated by accumulation of crystal defects, i.e., dislocations. In previous studies, crystal d	vi
dc.language.iso	eng	vi
dc.publisher	Lecture Notes in Mechanical Engineering	vi
dc.subject	Compressive stress	-
dc.subject	Silicon
dc.subject	MEMS	vi
dc.title	One More Evidence Supporting Damage Growth Inside Silicon MEMS Structures from Comparison of Strength Affected by Cyclic Compressive Stress	vi
dc.type	Bài trích	vi
eperson.identifier.doi	10.1007/978-3-030-69610-8_110	-
Appears in Collections	Bài báo khoa học

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