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  • Authors: Abdullah H. Alshehri; Jhi Yong Loke; Viet Huong Nguyen; Alexander Jones; Hatameh Asgarimoghaddam; Louis-Vincent Delumeau; Ahmed Shahin; Khaled H. Ibrahim; Kissan Mistry; Mustafa Yavuz; David Muñoz-Rojas; Kevin P. Musselman;  Advisor: -;  Co-Author: - (2021)

    Nanoscale films are integral to all modern electronics. To optimize device performance, researchers vary the film thickness by making batches of devices, which is time-consuming and produces experimental artifacts. Thin films with nanoscale thickness gradients that are rapidly deposited in open air for combinatorial and high-throughput (CHT) studies are presented. Atmospheric pressure spatial atomic layer deposition reactor heads are used to produce spatially varying chemical vapor deposition rates on the order of angstroms per second. ZnO and Al2O3 films are printed with nm-scale thickness gradients in as little as 45 s and CHT analysis of a metal-insulator-metal diode and perovskite solar cell is performed. By testing 360 Pt/Al2O3/Al diodes with 18 different Al2O3 thicknesses on o...

  • Authors: Dorina T Papanastasiou1; Nicolas Charvin; Joao Resende; Viet Huong Nguyen; Abderrahime Sekkat; David Muñoz-Rojas; Carmen Jiménez; Lionel Flandin; Daniel Bellet;  Advisor: -;  Co-Author: - (2021)

    Silver nanowire (AgNW) networks are among the most promising indium-free, flexible transparent electrodes for energy, lighting and heating devices. However, the lack of stability of such networks is a key factor that limits their industrial application. While applications require homogeneous networks, non-homogeneous AgNW networks are intentionally prepared in the present work to probe the mechanisms leading to failure under electrical stress. We show that induced non-homogeneities have a strong impact both on the spatial distribution of temperature (measured by IR imaging) and the current density throughout the electrode (as deduced from modeling). Regions with higher current density under elevated electrical stress are correlated to the origin of degradation. Furthermore, the infl...

  • Authors: Abdullah H. Alshehr; Jhi Yong Loke; Viet Huong Nguyen; Alexander Jones; Hatameh Asgarimoghaddam; Louis-Vincent Delumeau; Ahmed Shahin; Khaled H. Ibrahim; Kissan Mistry; Mustafa Yavuz; David Mu�oz-Rojas; Kevin P. Musselman;  Advisor: -;  Co-Author: - (2021)

    Nanoscale films are integral to all modern electronics. To optimize device performance, researchers vary the film thickness by making batches of devices, which is time-consuming and produces experimental artifacts. Thin films with nanoscale thickness gradients that are rapidly deposited in open air for combinatorial and high-throughput (CHT) studies are presented. Atmospheric pressure spatial atomic layer deposition reactor heads are used to produce spatially varying chemical vapor deposition rates on the order of angstroms per second. ZnO and Al2O3 films are printed with nm-scale thickness gradients in as little as 45 s and CHT analysis of a metal-insulator-metal diode and perovskite solar cell is performed. By testing 360 Pt/Al2O3/Al diodes with 18 different Al2O3 thicknesses on o...

  • Authors: Punam Murkute; Carmen Jiménez; Abderrahime Sekkat; Chiara Crivello; Viet Huong Nguyen; David Muñoz Rojas;  Advisor: -;  Co-Author: - (2021)

    Al-doped ZnO (AZO) has received significant attention due to its inherent properties like wide bandgap, high optical transparency, and electrical conductivity that has established its potential application in optoelectronic devices. The primary challenge in the efficient use of AZO thin films is the un-intentional formation of intrinsic defects, which deteriorate the device performance. The research community has made a significant effort to minimize these intrinsic defects and obtained high-quality films using low-cost growth techniques followed by a post-growth annealing treatment that has successfully suppressed defect states' formation. This presentation provides a comprehensive picture of the current state of knowledge on AZO's growth using spatial atomic layer deposition (SALD...