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    • The electronic properties of boron-doped germanium nanocrystals films
    Authors: Shan, Dan; Wang, Menglong; Sun, Daoyuan;  Advisor: -;  Co-Author: - (2023)

    Various doping concentrations of boron (B)-doped germanium nanocrystal (Ge NC) films were prepared using the plasma-enhanced chemical vapor deposition (PECVD) technique followed by thermal annealing treatment. The electronic properties of B-doped Ge NCs films combined with the microstructural characterization were investigated. It is worthwhile mentioning that the Hall mobilities μHall of Ge NCs films were enhanced after B doping and reached to the maximum of 200 cm2 V−1, which could be ascribed to the reduction in surface defects states in the B-doped films. It is also important to highlight that the temperature-dependent mobilities μH(T) exhibited different temperature dependence trends in the Ge NCs films before and after B doping.