Item Infomation
Title: | The electronic properties of boron-doped germanium nanocrystals films |
Authors: | Shan, Dan Wang, Menglong Sun, Daoyuan |
Issue Date: | 2023 |
Publisher: | Springer |
Abstract: | Various doping concentrations of boron (B)-doped germanium nanocrystal (Ge NC) films were prepared using the plasma-enhanced chemical vapor deposition (PECVD) technique followed by thermal annealing treatment. The electronic properties of B-doped Ge NCs films combined with the microstructural characterization were investigated. It is worthwhile mentioning that the Hall mobilities μHall of Ge NCs films were enhanced after B doping and reached to the maximum of 200 cm2 V−1, which could be ascribed to the reduction in surface defects states in the B-doped films. It is also important to highlight that the temperature-dependent mobilities μH(T) exhibited different temperature dependence trends in the Ge NCs films before and after B doping. |
Description: | CC-BY |
URI: | https://link.springer.com/article/10.1186/s11671-023-03893-7 https://dlib.phenikaa-uni.edu.vn/handle/PNK/9036 |
Appears in Collections | OER - Khoa học Vật liệu, Ứng dụng |
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