Thông tin tài liệu
Nhan đề : |
Assessing the performance of MoTe2 based solar cell with Cu2O hole transport layer through device simulation |
Tác giả : |
Rahman, Naimur Haque, Md. Dulal Rahman, Md. Ferdous |
Năm xuất bản : |
2023 |
Nhà xuất bản : |
Springer |
Tóm tắt : |
In this study, the SCAPS-1D tool has been used to numerically examine the performance of Transition Metal Dichalcogenides (TMDC) based Molybdenum ditelluride (MoTe2) solar cells containing CdS electron transport layer (ETL) and Cu2O hole transport layer (HTL). Based on the photovoltaic cell parameters, including absorber layer thickness, temperature, defect density, the effects of series and shunt resistance, and electron affinity, the structure of both MoTe2 based solar cells with and without the usage of the HTL has been analyzed. With 1.1 μm thickness of MoTe2 and doping density of 5 × 1015 cm−3, Al/FTO/CdS/MoTe2/Cu2O/Ni heterojunction’s solar cell proposed structure has been optimized. The final power conversion efficiency (PCE) = 32.38%, open-circuit voltage (Voc) = 1.07 V, short-circuit current (Jsc) = 35.12 mA/cm2, and fill factor (FF) = 86.32% has been determined from the optimized structure. |
Mô tả: |
CC-BY |
URI: |
https://link.springer.com/article/10.1007/s43939-023-00061-7 https://dlib.phenikaa-uni.edu.vn/handle/PNK/8993 |
Bộ sưu tập |
OER - Khoa học Vật liệu, Ứng dụng |
XEM MÔ TẢ
22
XEM TOÀN VĂN
14
Danh sách tệp tin đính kèm: