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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shan, Dan | - |
| dc.contributor.author | Wang, Menglong | - |
| dc.contributor.author | Sun, Daoyuan | - |
| dc.date.accessioned | 2023-09-15T03:22:28Z | - |
| dc.date.available | 2023-09-15T03:22:28Z | - |
| dc.date.issued | 2023 | - |
| dc.identifier.uri | https://link.springer.com/article/10.1186/s11671-023-03893-7 | - |
| dc.identifier.uri | https://dlib.phenikaa-uni.edu.vn/handle/PNK/9036 | - |
| dc.description | CC-BY | vi |
| dc.description.abstract | Various doping concentrations of boron (B)-doped germanium nanocrystal (Ge NC) films were prepared using the plasma-enhanced chemical vapor deposition (PECVD) technique followed by thermal annealing treatment. The electronic properties of B-doped Ge NCs films combined with the microstructural characterization were investigated. It is worthwhile mentioning that the Hall mobilities μHall of Ge NCs films were enhanced after B doping and reached to the maximum of 200 cm2 V−1, which could be ascribed to the reduction in surface defects states in the B-doped films. It is also important to highlight that the temperature-dependent mobilities μH(T) exhibited different temperature dependence trends in the Ge NCs films before and after B doping. | vi |
| dc.language.iso | en | vi |
| dc.publisher | Springer | vi |
| dc.subject | Ge NC | vi |
| dc.subject | PECVD | vi |
| dc.title | The electronic properties of boron-doped germanium nanocrystals films | vi |
| dc.type | Book | vi |
| Appears in Collections | OER - Khoa học Vật liệu, Ứng dụng | |
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