DLTS Study of Defects in HgCdTe Heterostructure Photodiode

Abstract

Deep-level transient spectroscopy (DLTS) measurements were performed on HgCdTe heterostructure photodiode grown by metal-organic chemical vapor deposition (MOCVD) on GaAs substrate. In order to extract defects from individual layers of the heterostructure, three consecutive etchings were performed. In the first experiment, the N+/T/p/T/P+/n+ structure was chemically etched to the N+ bottom contact to obtain a mesa-type detector. Six localized defects were extracted across the entire photodiode. In the second experiment, the bottom contact was made to the p-type absorber. Two localized defects were found in the p/T/P+/n+ structure.