Item Infomation
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Majkowycz, K. | - |
dc.contributor.author | Murawski, K. | - |
dc.contributor.author | Manyk, T. | - |
dc.date.accessioned | 2023-10-10T08:15:40Z | - |
dc.date.available | 2023-10-10T08:15:40Z | - |
dc.date.issued | 2023 | - |
dc.identifier.uri | https://link.springer.com/article/10.1007/s11664-023-10653-x | - |
dc.identifier.uri | https://dlib.phenikaa-uni.edu.vn/handle/PNK/9516 | - |
dc.description | CC-BY | vi |
dc.description.abstract | Deep-level transient spectroscopy (DLTS) measurements were performed on HgCdTe heterostructure photodiode grown by metal-organic chemical vapor deposition (MOCVD) on GaAs substrate. In order to extract defects from individual layers of the heterostructure, three consecutive etchings were performed. In the first experiment, the N+/T/p/T/P+/n+ structure was chemically etched to the N+ bottom contact to obtain a mesa-type detector. Six localized defects were extracted across the entire photodiode. In the second experiment, the bottom contact was made to the p-type absorber. Two localized defects were found in the p/T/P+/n+ structure. | vi |
dc.language.iso | es | vi |
dc.publisher | Springer | vi |
dc.subject | MOCVD | vi |
dc.subject | DLTS | vi |
dc.title | DLTS Study of Defects in HgCdTe Heterostructure Photodiode | vi |
dc.type | Book | vi |
Appears in Collections | ||
OER - Khoa học Vật liệu, Ứng dụng |
Files in This Item: