Thông tin tài liệu
Nhan đề : |
DLTS Study of Defects in HgCdTe Heterostructure Photodiode |
Tác giả : |
Majkowycz, K. Murawski, K. Manyk, T. |
Năm xuất bản : |
2023 |
Nhà xuất bản : |
Springer |
Tóm tắt : |
Deep-level transient spectroscopy (DLTS) measurements were performed on HgCdTe heterostructure photodiode grown by metal-organic chemical vapor deposition (MOCVD) on GaAs substrate. In order to extract defects from individual layers of the heterostructure, three consecutive etchings were performed. In the first experiment, the N+/T/p/T/P+/n+ structure was chemically etched to the N+ bottom contact to obtain a mesa-type detector. Six localized defects were extracted across the entire photodiode. In the second experiment, the bottom contact was made to the p-type absorber. Two localized defects were found in the p/T/P+/n+ structure. |
Mô tả: |
CC-BY |
URI: |
https://link.springer.com/article/10.1007/s11664-023-10653-x https://dlib.phenikaa-uni.edu.vn/handle/PNK/9516 |
Bộ sưu tập |
OER - Khoa học Vật liệu, Ứng dụng |
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