Experimental Determination of the Dependence Between Spectral Response and Current–Voltage Characteristics for MWIR HgCdTe Detectors

Abstract

Experimental results are reported for a medium-wavelength infrared (MWIR) HgCdTe photodetector designed in a joint laboratory run by VIGO Photonics S.A. and the Military University of Technology. The parameters of the MWIR detectors fabricated with HgCdTe heterostructures were studied. Advances in the metal–organic chemical vapor deposition (MOCVD) technique enable the growth of HgCdTe epilayers with a wide range of composition and doping, used for uncooled infrared detectors. Device-quality HgCdTe heterostructures were deposited on 2-inch-diameter, low-cost (100) GaAs substrates. The heterostructures obtained were examined measuring the spectral response and current–voltage characteristics in different temperatures.