Tìm kiếm theo: Tác giả Joao Resende

Duyệt theo: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Hoặc nhập chữ cái đầu tiên:  
Kết quả [1 - 2] / 2
  • Tác giả : Dorina T Papanastasiou1; Nicolas Charvin; Joao Resende; Viet Huong Nguyen; Abderrahime Sekkat; David Muñoz-Rojas; Carmen Jiménez; Lionel Flandin; Daniel Bellet;  Người hướng dẫn: -;  Đồng tác giả: - (2021)

    Silver nanowire (AgNW) networks are among the most promising indium-free, flexible transparent electrodes for energy, lighting and heating devices. However, the lack of stability of such networks is a key factor that limits their industrial application. While applications require homogeneous networks, non-homogeneous AgNW networks are intentionally prepared in the present work to probe the mechanisms leading to failure under electrical stress. We show that induced non-homogeneities have a strong impact both on the spatial distribution of temperature (measured by IR imaging) and the current density throughout the electrode (as deduced from modeling). Regions with higher current density...
  • Tác giả : Joao Resende;  Người hướng dẫn: Abderrahime Sekkat; Viet Huong Nguyen; Tomy Chatin; Carmen Jiménez; Mónica Burriel; Daniel Bellet; David Muñoz-Rojas;  Đồng tác giả: - (2021)

    Threshold switching devices are fundamental active elements in more than Moore approaches, integrating the new generation of non-volatile memory devices. Here, the authors report an in-plane threshold resistive switching device with an on/off ratio above 106, a low resistance state of 10 to 100 kΩ and a high resistance state of 10 to 100 GΩ. Our devices are based on nanocomposites of silver nanowire networks and titanium oxide, where volatile unipolar threshold switching takes place across the gap left by partially spheroidized nanowires. Device reversibility depends on the titanium oxide thickness, while nanowire network density determines the threshold voltage, which can reach as lo...