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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Fukang, Deng | - |
| dc.contributor.author | Jianhong, Wei | - |
| dc.contributor.author | Yadong, Xu | - |
| dc.date.accessioned | 2023-04-19T03:26:23Z | - |
| dc.date.available | 2023-04-19T03:26:23Z | - |
| dc.date.issued | 2023 | - |
| dc.identifier.uri | https://link.springer.com/article/10.1007/s40820-023-01061-1 | - |
| dc.identifier.uri | https://dlib.phenikaa-uni.edu.vn/handle/PNK/8057 | - |
| dc.description | CC BY | vi |
| dc.description.abstract | Low-dimensional transition metal dichalcogenides (TMDs) have unique electronic structure, vibration modes, and physicochemical properties, making them suitable for fundamental studies and cutting-edge applications such as silicon electronics, optoelectronics, and bioelectronics. However, the brittleness, low toughness, and poor mechanical and electrical stabilities of TMD-based films limit their application. Herein, a TaS2 freestanding film with ultralow void ratio of 6.01% is restacked under the effect of bond-free van der Waals (vdW) interactions within the staggered 2H-TaS2 nanosheets. The restacked films demonstrated an exceptionally high electrical conductivity of 2,666 S cm−1, electromagnetic interference shielding effectiveness (EMI SE) of 41.8 dB, and absolute EMI SE (SSE/t) of 27,859 dB cm2 g−1, which is the highest value reported for TMD-based materials. | vi |
| dc.language.iso | en | vi |
| dc.publisher | Springer | vi |
| dc.subject | transition metal dichalcogenides | vi |
| dc.subject | TMD-based materials | vi |
| dc.title | Regulating the Electrical and Mechanical Properties of TaS2 Films via van der Waals and Electrostatic Interaction for High Performance Electromagnetic Interference Shielding | vi |
| dc.type | Book | vi |
| Appears in Collections | OER - Kỹ thuật điện; Điện tử - Viễn thông | |
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