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dc.contributor.authorFukang, Deng-
dc.contributor.authorJianhong, Wei-
dc.contributor.authorYadong, Xu-
dc.date.accessioned2023-04-19T03:26:23Z-
dc.date.available2023-04-19T03:26:23Z-
dc.date.issued2023-
dc.identifier.urihttps://link.springer.com/article/10.1007/s40820-023-01061-1-
dc.identifier.urihttps://dlib.phenikaa-uni.edu.vn/handle/PNK/8057-
dc.descriptionCC BYvi
dc.description.abstractLow-dimensional transition metal dichalcogenides (TMDs) have unique electronic structure, vibration modes, and physicochemical properties, making them suitable for fundamental studies and cutting-edge applications such as silicon electronics, optoelectronics, and bioelectronics. However, the brittleness, low toughness, and poor mechanical and electrical stabilities of TMD-based films limit their application. Herein, a TaS2 freestanding film with ultralow void ratio of 6.01% is restacked under the effect of bond-free van der Waals (vdW) interactions within the staggered 2H-TaS2 nanosheets. The restacked films demonstrated an exceptionally high electrical conductivity of 2,666 S cm−1, electromagnetic interference shielding effectiveness (EMI SE) of 41.8 dB, and absolute EMI SE (SSE/t) of 27,859 dB cm2 g−1, which is the highest value reported for TMD-based materials.vi
dc.language.isoenvi
dc.publisherSpringervi
dc.subjecttransition metal dichalcogenidesvi
dc.subjectTMD-based materialsvi
dc.titleRegulating the Electrical and Mechanical Properties of TaS2 Films via van der Waals and Electrostatic Interaction for High Performance Electromagnetic Interference Shieldingvi
dc.typeBookvi
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OER - Kỹ thuật điện; Điện tử - Viễn thông

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